transistor(npn) features ? complementary t o mmst 4403 ? small surface mount pa ckage marking: k 3x m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 60 v v ceo collector - emitter voltage 40 v v ebo emitter - base voltage 6 v i c collector current 600 m a p c collector power dissipation 200 m w r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 0 0 a , i e =0 60 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 40 v emitter - base breakdown voltage v (br)eb o i e = 1 0 0 a , i c =0 6 v collector cut - off current i cbo v cb = 35 v, i e =0 100 n a collector cut - off current i c e o v c e = 35 v, i b =0 500 n a v ce = 1 v, i c = 100 a 20 v ce = 1 v, i c = 1m a 40 v ce = 1 v, i c = 10m a 80 v ce = 1 v, i c = 150m a 100 300 dc current gain h fe v ce = 2 v, i c = 500m a 40 i c = 1 50 m a, i b = 1 5 ma 0. 4 v collector - emitter saturation voltage v ce(sat) i c = 50 0 m a, i b = 5 0 ma 0. 75 v i c = 1 5 0m a, i b = 1 5 ma 0.75 0. 9 5 v base - emitter saturation voltage v b e(sat) i c = 5 0 0m a, i b = 5 0 ma 1.2 v transition frequency f t v ce = 1 0 v,i c = 2 0 ma , f=1 00 mhz 250 mhz collector output capacitance c ob v cb = 5 v, i e =0, f=1mhz 6.5 pf so t C 3 23 1. base 2. emitter 3. collector MMST4401 1 date:2011/05 www.htsemi.com semiconductor jinyu
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